Double-sided cooling and thermo-electrical management of power transients for silicon chips on DCB-substrates for converter applications: Design, technology and test
B. Wunderle, C. Manier, M. A. Ras, M. Springborn, D. May, H. Oppermann, M. Toepper, R. Mrossko, T. Xhonneux, T. Caroff, W. Maurer, R. Mitova
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引用次数: 9
Abstract
This paper deals with the system design, technology and test of a novel concept of integrating Si and SiC power dies along with thermo-electric coolers in order to thermally manage transients occurring during operation. The concept features double-sided cooling as well as new materials and joining technologies to integrate the dies such as transient liquid phase bonding/soldering and sintering. Coupled-field simulations are used to predict thermal performance and are verified by especially designed test stands to very good agreement. This paper is the second in a series of publications on the ongoing work.