{"title":"Indium-free transparent thin film transistors based on nanocrystalline ZnO","authors":"B. Bayraktaroglu, K. Leedy, R. Scott","doi":"10.1109/DRC.2011.5994516","DOIUrl":null,"url":null,"abstract":"Wide bandgap semiconductors based on (Zn, In, Ga, Sn)-oxides are all good candidates for the channel material in transparent thin film transistors (TTFT) because of their simultaneous high electron mobility and optical transparency properties. The choice of contact layers are, however, more limited because not all metal oxides can be doped high enough to yield low resistivity layers. Historically, the most common contact layers are ternary compounds that include indium (e.g. indium-tin-oxide, indium-zinc-oxide etc). These indium-containing transparent conductive oxide (TCO) films find widespread applications in flat panel displays and touch-sensitive surfaces of many communication devices. Because of the rapidly expanding markets for such devices, and the limited availability of indium in the world markets, the increased demand-to-supply ratio has caused the cost of indium to increase very rapidly. There are concerns about the continuity of indium supply for future devices.1","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994516","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Wide bandgap semiconductors based on (Zn, In, Ga, Sn)-oxides are all good candidates for the channel material in transparent thin film transistors (TTFT) because of their simultaneous high electron mobility and optical transparency properties. The choice of contact layers are, however, more limited because not all metal oxides can be doped high enough to yield low resistivity layers. Historically, the most common contact layers are ternary compounds that include indium (e.g. indium-tin-oxide, indium-zinc-oxide etc). These indium-containing transparent conductive oxide (TCO) films find widespread applications in flat panel displays and touch-sensitive surfaces of many communication devices. Because of the rapidly expanding markets for such devices, and the limited availability of indium in the world markets, the increased demand-to-supply ratio has caused the cost of indium to increase very rapidly. There are concerns about the continuity of indium supply for future devices.1
基于(Zn, In, Ga, Sn)氧化物的宽带隙半导体由于其同时具有高电子迁移率和光学透明性,都是透明薄膜晶体管(TTFT)通道材料的良好候选者。然而,接触层的选择是有限的,因为并不是所有的金属氧化物都能掺杂到足够高的水平以产生低电阻率层。历史上,最常见的接触层是包含铟的三元化合物(如氧化铟锡、氧化铟锌等)。这些含铟的透明导电氧化物(TCO)薄膜广泛应用于平板显示器和许多通信设备的触摸敏感表面。由于这种设备的市场迅速扩大,而铟在世界市场上的可用性有限,需求与供应比的增加导致铟的成本迅速增加。人们担心未来设备的铟供应能否持续