{"title":"Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells","authors":"F. Stellari, L. Ocola, E. Wu, T. Ando, P. Song","doi":"10.1109/IPFA55383.2022.9915718","DOIUrl":null,"url":null,"abstract":"In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"17 2-3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.
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