{"title":"CMOS kink effect-induced instability in Al/AlOx single electron transistors","authors":"A. Prager, H. George, A. Orlov, G. Snider","doi":"10.1109/DRC.2010.5551862","DOIUrl":null,"url":null,"abstract":"We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.
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