Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology

Gang Liu, M. Kaynak, T. Purtova, A. Ulusoy, B. Tillack, H. Schumacher
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引用次数: 9

Abstract

This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequency-divided (divide by 64) outputs, with integrated frequency dividers. The fundamental output power is 4/5 dBm and the phase noise at 1 MHz offset is -84/-86 dBc/Hz for the lower/upper bands. To the authors' knowledge, this is the first millimeter-wave, dual-band VCO with fully integrated RF-MEMS switches.
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双频毫米波压控振荡器,在BiCMOS技术中嵌入RF-MEMS开关模块
本文介绍了一种利用RF-MEMS开关完全集成到标准BiCMOS工艺中的双频毫米波压控振荡器。开关和相关的传输线在VCO核心中形成一个可重构的电感器。根据开关的状态,压控振荡器的频率可以从48 GHz调到52 GHz,或者从64 GHz调到72 GHz。VCO提供基频和分频(除以64)输出,带有集成分频器。基频输出功率为4/ 5dbm,下/上频段在1mhz偏移时的相位噪声为-84/-86 dBc/Hz。据作者所知,这是第一个具有完全集成RF-MEMS开关的毫米波双频VCO。
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