Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu
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引用次数: 0
Abstract
A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.
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