Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454127
Min-Li Chou, Yi-Qi Chiang, H. Chiu, F. Huang
A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental- and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.
{"title":"A broadband and high power frequency tripler using 0.5 µm GaN-on-SiC HEMT technology","authors":"Min-Li Chou, Yi-Qi Chiang, H. Chiu, F. Huang","doi":"10.1109/ICCPS.2015.7454127","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454127","url":null,"abstract":"A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental- and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"309 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121030046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454179
Xing Yin, Huijun Feng, Jun Xu
An ultra-wideband suspended stripline (SSL) structure high-pass filter with multi-stubs is proposed. A quasi-lumped approach is used to design the filter based on a 7th-order Chebyshev high-pass filter. For the designed high-pass filter, from 5.7 to 30 GHz, the insertion loss is less than -0.5 dB and the return loss is better than -11 dB. From 5.7 to 20 GHz, the return loss is greater than -17 dB, while the suppression of filter is better than -57 dB below 5 GHz.
{"title":"Design of UWB high-pass filter using the suspended stripline","authors":"Xing Yin, Huijun Feng, Jun Xu","doi":"10.1109/ICCPS.2015.7454179","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454179","url":null,"abstract":"An ultra-wideband suspended stripline (SSL) structure high-pass filter with multi-stubs is proposed. A quasi-lumped approach is used to design the filter based on a 7th-order Chebyshev high-pass filter. For the designed high-pass filter, from 5.7 to 30 GHz, the insertion loss is less than -0.5 dB and the return loss is better than -11 dB. From 5.7 to 20 GHz, the return loss is greater than -17 dB, while the suppression of filter is better than -57 dB below 5 GHz.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123447607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454144
Zhang Zhun, He Wei, Luo Sheng, Jianmin Cao, Qingyang Wu
This paper investigates a heavy ion impacts different locations dependency of charge sharing in 65nm CMOS technology. Three new types structures of charge sharing mechanism (NMOS-NMOS, PMOS-PMOS and NMOS-PMOS) are designed to evaluate the influence of single event effect, and TCAD simulation results reveal that the device sensitive node can collect a large number of charges when the heavy ion impacting location is closer to drain contact for NMOS, and when the location is closer to source contact for PMOS, the PMOS transistor sensitive node can collect much more charges. And the charge sharing will affect the reliability when the ion strikes the center between the two transistors no matter to PMOS or NMOS. The charge sharing influences of three types structures are compared, and it can be a guidance to improve the reliability of devices.
{"title":"Research on the influence of charge sharing for SEE locations based on 65nm CMOS technology","authors":"Zhang Zhun, He Wei, Luo Sheng, Jianmin Cao, Qingyang Wu","doi":"10.1109/ICCPS.2015.7454144","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454144","url":null,"abstract":"This paper investigates a heavy ion impacts different locations dependency of charge sharing in 65nm CMOS technology. Three new types structures of charge sharing mechanism (NMOS-NMOS, PMOS-PMOS and NMOS-PMOS) are designed to evaluate the influence of single event effect, and TCAD simulation results reveal that the device sensitive node can collect a large number of charges when the heavy ion impacting location is closer to drain contact for NMOS, and when the location is closer to source contact for PMOS, the PMOS transistor sensitive node can collect much more charges. And the charge sharing will affect the reliability when the ion strikes the center between the two transistors no matter to PMOS or NMOS. The charge sharing influences of three types structures are compared, and it can be a guidance to improve the reliability of devices.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116617043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454175
Menghao Xu, Huaxi Gu, Yu Xiaoshan
With the rapid growth of cloud computing, there is great interest in designing improved networks for data centers. In this paper a bufferless optical interconnect called CFDOS is proposed for data center networks, which exploits the unique wavelength routing characteristics of Arrayed Waveguide Grating Router (AWGR). We take full advantage of optical parallelism and wavelength division multiplexing in our design. A feedback acknowledgement scheme is proposed in order to remove the need for loopback buffers. CFDOS also features the separated data forwarding plane and control plane. In our study, we simulate and analyze the CFDOS architecture. Simulation results for CFDOS show good performance in terms of latency and throughput.
{"title":"An AWGR-based bufferless interconnect for data centers","authors":"Menghao Xu, Huaxi Gu, Yu Xiaoshan","doi":"10.1109/ICCPS.2015.7454175","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454175","url":null,"abstract":"With the rapid growth of cloud computing, there is great interest in designing improved networks for data centers. In this paper a bufferless optical interconnect called CFDOS is proposed for data center networks, which exploits the unique wavelength routing characteristics of Arrayed Waveguide Grating Router (AWGR). We take full advantage of optical parallelism and wavelength division multiplexing in our design. A feedback acknowledgement scheme is proposed in order to remove the need for loopback buffers. CFDOS also features the separated data forwarding plane and control plane. In our study, we simulate and analyze the CFDOS architecture. Simulation results for CFDOS show good performance in terms of latency and throughput.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129155817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454204
Yang Huang, Mengkui Shen, Z. Shao
In this paper, a millimeter wave vertical transition with ultra wideband filtering function is presented. Compared with the traditional vertical transition, it not only has the vertical transition function, but also has ultra wideband millimeter wave filtering function. The simulated result shows that the proposed vertical transition has a good performance. The insertion loss in the center frequency of 37.465GHz is 1.12dB and 3dB bandwidth is from 28.14GHz to 46.79GHz. Its bandwidth is about 18.65GHz and fractional bandwidth is about 49.78%. This plane size is 20×15mm2. In addition, the substrate integrated waveguide (SIW) cavity is used as vertical transition unit and resonant unit. It also utilizes two folded SIW cavities to reduce the size of vertical transition. Comparing with the plane SIW cavity, this design has smaller size, better performance in achieving the same bandwidth filter, it is conducive to for 3D multichip module (3D-MCM) application.
{"title":"Ultra wideband filtering vertical transition for millimeter wave 3D integration","authors":"Yang Huang, Mengkui Shen, Z. Shao","doi":"10.1109/ICCPS.2015.7454204","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454204","url":null,"abstract":"In this paper, a millimeter wave vertical transition with ultra wideband filtering function is presented. Compared with the traditional vertical transition, it not only has the vertical transition function, but also has ultra wideband millimeter wave filtering function. The simulated result shows that the proposed vertical transition has a good performance. The insertion loss in the center frequency of 37.465GHz is 1.12dB and 3dB bandwidth is from 28.14GHz to 46.79GHz. Its bandwidth is about 18.65GHz and fractional bandwidth is about 49.78%. This plane size is 20×15mm2. In addition, the substrate integrated waveguide (SIW) cavity is used as vertical transition unit and resonant unit. It also utilizes two folded SIW cavities to reduce the size of vertical transition. Comparing with the plane SIW cavity, this design has smaller size, better performance in achieving the same bandwidth filter, it is conducive to for 3D multichip module (3D-MCM) application.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123238902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454219
Rifeng Wang, Gang Chen
Link discovery (LD) is an important task in data mining for identifying interactions between data groups, or relating in society community networks. A new strategy is designed for mining a new kind of link: negative links between data clusters. The efficiency is gained by pruning strong positive relative items. Negative item is computing with correlation coefficient. The number of the negative item correlation is used to identify the negative links between clusters. These negative links are extremely useful in business fraud, medical treatment and incursion detection. Experiments on real datasets illustrate that our approach is efficient and promising.
{"title":"Mining negative links between data clusters","authors":"Rifeng Wang, Gang Chen","doi":"10.1109/ICCPS.2015.7454219","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454219","url":null,"abstract":"Link discovery (LD) is an important task in data mining for identifying interactions between data groups, or relating in society community networks. A new strategy is designed for mining a new kind of link: negative links between data clusters. The efficiency is gained by pruning strong positive relative items. Negative item is computing with correlation coefficient. The number of the negative item correlation is used to identify the negative links between clusters. These negative links are extremely useful in business fraud, medical treatment and incursion detection. Experiments on real datasets illustrate that our approach is efficient and promising.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121413939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454113
Xiaoning Li, Shengyong Liu, Y. Yue, Hongyu Lai
As the purpose of improving scheduling efficiency to create a tower parking system model. To analyze the different speed variations on the lifting process of new sliding equipment. The mathematical models of different operating strategies are created. To simulate different access process that is based on the queuing theory. Then by comprehensively analyzing the experimental results of MATLAB simulation, which shows that place to wait strategy with new equipment effectively improves the efficiency of the parking garage system. And this study can provide guidance and help for the company products.
{"title":"Research on vehicle scheduling strategy of “non-shaped” tower parking garage","authors":"Xiaoning Li, Shengyong Liu, Y. Yue, Hongyu Lai","doi":"10.1109/ICCPS.2015.7454113","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454113","url":null,"abstract":"As the purpose of improving scheduling efficiency to create a tower parking system model. To analyze the different speed variations on the lifting process of new sliding equipment. The mathematical models of different operating strategies are created. To simulate different access process that is based on the queuing theory. Then by comprehensively analyzing the experimental results of MATLAB simulation, which shows that place to wait strategy with new equipment effectively improves the efficiency of the parking garage system. And this study can provide guidance and help for the company products.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126300576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454235
Zhu Ming, Wang Ling, Ling Zhongqiu, L. Yuehua, Qi Ning, Li Ran
Introducing the concept of SDN technology, this paper proposed to establish, combining with the current business of the power communication access network in Liaoning Province, a unified SDN-based control platform which defines the OpenFlow as the standard communication protocol between the control layer and forwarding devices. According to the network programmability, this paper realizes a balanced planning of the limited resources. In Liaoning Province power communication access network, we build a multi-level flow table in OpenFlow forwarding model to enhancing the capability of Intelligent Edge forwarding in control layer, the efficient carrying capacity of backbone network, and network openness and interoperability, and to realize the unified management and control of power communication equipments.
{"title":"The design of SDN technology application in power communication access network","authors":"Zhu Ming, Wang Ling, Ling Zhongqiu, L. Yuehua, Qi Ning, Li Ran","doi":"10.1109/ICCPS.2015.7454235","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454235","url":null,"abstract":"Introducing the concept of SDN technology, this paper proposed to establish, combining with the current business of the power communication access network in Liaoning Province, a unified SDN-based control platform which defines the OpenFlow as the standard communication protocol between the control layer and forwarding devices. According to the network programmability, this paper realizes a balanced planning of the limited resources. In Liaoning Province power communication access network, we build a multi-level flow table in OpenFlow forwarding model to enhancing the capability of Intelligent Edge forwarding in control layer, the efficient carrying capacity of backbone network, and network openness and interoperability, and to realize the unified management and control of power communication equipments.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132406012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454173
Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu
A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.
{"title":"A 140–190 GHz amplifier based on 0.5-um InP DHBT transistor","authors":"Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu","doi":"10.1109/ICCPS.2015.7454173","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454173","url":null,"abstract":"A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"6 9-10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132497847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/ICCPS.2015.7454176
Jun-Ling Xie, Wei Cheng, Y. Wang, B. Niu, Long Chang, Tangsheng Chen
Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.
{"title":"Current gain increase by SiNx passivation in InGaAs/InP double heterostructure bipolar transistors","authors":"Jun-Ling Xie, Wei Cheng, Y. Wang, B. Niu, Long Chang, Tangsheng Chen","doi":"10.1109/ICCPS.2015.7454176","DOIUrl":"https://doi.org/10.1109/ICCPS.2015.7454176","url":null,"abstract":"Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130000216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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