Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

M. Kuo, B. J. Liu, T. L. Huang, H. Lin, Pei-Wen Li
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Abstract

We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400–1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103–108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for Pin = 6nW−1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.
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用于单片硅光子学的ge点光电效应晶体管在累积模式下工作的非常大的光增益和高光响应线性度
我们通过实验证明,在Si MOSFET的栅极堆叠中包含Ge点可以提供超过1,000A/W的极高光响应率,并且在400-1300nm照明下具有至少70年的优越光响应线性,这取决于Ge点photoMOSFET是在反转模式还是积累模式下工作。值得注意的是,由于极低的暗电流为40pA,我们的ge点photomosfet在累积模式下可以同时实现103-108A / a的非常大的光电流增益和Pin = 6nW - 1.376mW时至少60十年的光响应线性度的动态范围。对大功率照明下光载流子的产生和复合进行了分析模拟。
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