Optimisation of metal connections in lateral DMOS transistors for driving applications

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256880

P. Gassot, B. Desoete, R. Gillon, D. Bolognesi, M. Tack

引用次数: 5

Abstract

This paper presents the optimisation of the routing of multi-finger current drivers, based on lateral DMOS transistors, for switching applications, in order to limit the metal contribution. to the total driver on-resistance. The metal2 collecting current from the device fingers out of the source and drain, is shown to be the major contributor to the added series resistance for all aspect ratios, as long as the number of metal2 tracks is large enough. The experimental characterisation of the metal connection influence on the device on-resistance is successfully supported by circuit simulations, based on a lumped resistor network model of the driver.

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驱动应用中横向DMOS晶体管金属连接的优化

本文提出了基于横向DMOS晶体管的多指电流驱动器的路由优化，用于开关应用，以限制金属的贡献。总驱动导通电阻。金属2从器件的源极和漏极中收集电流，显示为所有纵横比增加串联电阻的主要贡献者，只要金属2轨道的数量足够大。基于驱动器的集总电阻网络模型，电路仿真成功地支持了金属连接对器件导通电阻影响的实验表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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