Crystal growth and properties of column III nitrides for short wavelength light emitters

Abstract

Column III nitrides are one of the most promising materials for the applications to short wavelength light emitters as well as high temperature electronics. The wurtzite polytypes of AlN, GaN and InN form a continuous alloy system whose direct bandgaps range from 1.9 eV for InN, to 3.4 eV for GaN and to 6.2 eV for A1N at room temperature. These nitrides are physically harder and more stable than wide-bandgap II -VI compounds. Furthermore, their unique physical properties will make them suitable for piezo-electric, acousto-optic and opto-electric devices.