Degradation of thin SiO/sub 2/ gate oxides by atomic hydrogen

Abstract

I Jot-electrons in gate oxides can release process-induced hydrogenic species from the Si02 network and from its interfaces. Additional oxide/intcrface degradation will occur because of subsequent chemical reactions. Atomic hydrogen, IP, is known to cause such damage at device operation temperatures.' To quantify the I In chemistry and to study its erects on device reliability, we have measured the Si-orientation dcpcndcncc, the oxidc thickness dependence and the temperature dependence of ZP-induced degradation using an atomic hydrogen sourc'c2 Thcrmal SiO, films on Si Were exposed to I P and the resulting degradation was characterized by current/voltagc, by high/low-rrequency capacitance-voltage and by electron paramagnetic resonancc measurement T . +