Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events

Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu
{"title":"Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events","authors":"Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu","doi":"10.1109/radecs47380.2019.9745654","DOIUrl":null,"url":null,"abstract":"Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}\\mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}\mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
XCR4C ASIC对重离子诱导瞬态事件脆弱性的表征
在$^{181}\mathbf{Ta}^{31+}}$离子辐照下,在x射线CCD的radhard四通道CDS ASIC (XCR4C)中观察到持续数十秒的瞬态,并将其归因于偏置电路中的互补反馈机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
CLASS: on-Chip Lightweight Accurate SEU/SET event claSSifier Approach for Defining Internal Electrostatic Discharge Design Environment of a Jovian Mission TID test results of radiation hardened SiC MOS structures The RADECS 2019 Short Course Circuit-Level Hardening Techniques to Mitigate Soft Errors in FinFET Logic Gates
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1