Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) Pub Date : 2001-05-09 DOI:10.1109/CICC.2001.929805

H. Nakayama, P. Su, C. Hu, M. Nakamura, H. Komatsu, K. Takeshita, Y. Komatsu

引用次数: 17

Abstract

Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18 /spl mu/m PD (Partially Depleted) SOI technology. In this methodology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to DC I-V data. Therefore, the parameters are free from SHE. DC, AC, and transient simulation results using this technology show good agreement with measurement data.

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SOI CMOS自热自由参数提取方法及电路仿真

基于SHE(自热效应)无器件建模的概念，提出了一种新的SOI(绝缘体上硅)模型参数提取方法，并对0.18 /spl mu/m PD(部分耗尽)SOI技术进行了验证。在此方法中，在SPICE参数提取之前，测量器件热阻，并将SHE引起的电流损耗解析地添加回直流I-V数据中。因此，参数不受SHE影响。采用该技术的直流、交流和暂态仿真结果与实测数据吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)

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