D. Robbins, M. Stanaway, S. Millidge, W. Y. Leong, R. Carline, N. Gordon
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引用次数: 0
Abstract
We report the first systematic study of p-Si,-,Ge,/Si quantum well infrared photodetectors (QWIPs) grown by low pressure vapour phase epitaxy, including detailed structural, electrical and opticaI characterisation. The growth method is compatible with industrial production, and the devices are potentially suitable as photoconductive detectors operating in normal incidence in large 2-D thermal imaging arrays. Structures have been grown with different numbers of periods and different QW widths, Si,-,Ge, compositions and doping levels. The Si barrier layers are typically 50nm thick and the p-Si contacts are ohmic. Representative characteristics for a 200pm diameter, mesa-isolated, 50 period device under 2V bias are a peak (7.2pm) quantum efficiency of 1 % for a single optical pass, differential resistances of 16MQ at 56K and 170kQ at 75K, and a 1OkHz noise current of 6.5E-13 A/*z at 77K.
我们报道了第一个通过低压气相外延生长的p-Si，- Ge，/Si量子阱红外探测器(qwip)的系统研究，包括详细的结构，电学和光学表征。该生长方法与工业生产兼容，并且该器件可能适合作为在大型二维热成像阵列中正常入射下工作的光导探测器。不同的周期数和不同的量子阱宽度、Si、-、Ge、成分和掺杂水平生长了不同的结构。硅势垒层通常为50nm厚，p-Si接触是欧姆的。在2V偏置下，直径200pm、台面隔离、50周期器件的代表性特征是单光通的峰值(7.2pm)量子效率为1%，在56K时差分电阻为16MQ，在75K时差分电阻为170kQ，在77K时噪声电流为6.5E-13 a /*z。
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