Dynamical simulation of flared semiconductor amplifiers for repetitive picosecond pulse amplification

B. Dagens, S. Balsamo, I. Montrosset
{"title":"Dynamical simulation of flared semiconductor amplifiers for repetitive picosecond pulse amplification","authors":"B. Dagens, S. Balsamo, I. Montrosset","doi":"10.1109/ISLC.1996.558788","DOIUrl":null,"url":null,"abstract":"We present a comprehensive model of picosecond pulse propagation in a flared semiconductor optical amplifier including the indirect interaction between successive pulses due to carrier depletion and partial recovering by diffusion and recombination.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"172 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.558788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We present a comprehensive model of picosecond pulse propagation in a flared semiconductor optical amplifier including the indirect interaction between successive pulses due to carrier depletion and partial recovering by diffusion and recombination.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
重复皮秒脉冲放大的喇叭半导体放大器的动力学仿真
我们提出了一种全面的皮秒脉冲在扩张型半导体光放大器中的传播模型,该模型包括由于载流子耗尽而导致的连续脉冲之间的间接相互作用以及通过扩散和复合产生的部分恢复。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Technology and application trends of photonic integrated circuits Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers Effect of process control in oxide-confined top-emitting lasers Experimental analysis of characteristic temperature in quantum-well semiconductor lasers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1