Highly reliable InP-based PIN-photodiode array monolithically integrated with 90° hybrid MMI using butt-joint regrowth

H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji
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引用次数: 1

Abstract

Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.
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高度可靠的基于inp的pin -光电二极管阵列单片集成90°混合MMI,采用对接再生
采用对接再生技术,在100 Gb/s相干接收机上实现了基于inp的高可靠性pin-光电二极管阵列与MMI组成的90°混合型单片集成。由于mmi之间波导的相位调整,各通道的响应性不平衡小于±0.5 dB。在-1.6 V的低偏置电压下,获得了26 GHz的宽3db带宽。通过优化InP钝化层厚度,可获得低至0.2 nA的暗电流(偏置:-3.0 V),并在加速老化试验中(175℃下-5 V)持续2000 h获得稳定的暗电流。
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