{"title":"Silicon angular resonance gyroscope by deep ICPRIE and XeF/sub 2/ gas etching","authors":"Jae-Joon Choi, R. Toda, K. Minami, M. Esashi","doi":"10.1109/MEMSYS.1998.659776","DOIUrl":null,"url":null,"abstract":"An angular resonance silicon gyroscope was fabricated by deep RIE and XeF/sub 2/ gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg/sec).","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1998.659776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
An angular resonance silicon gyroscope was fabricated by deep RIE and XeF/sub 2/ gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg/sec).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
