Aluminum top-gate ZnO nanowire transistors with improved transconductance

Abstract

Field-effect transistors (FETs) based on semiconducting nanowires are potentially useful to replace thin-film transistors (TFTs) in active-matrix displays, since the larger mobility and smaller footprint of nanowire FETs compared with a-Si:H and organic TFTs provide faster pixel charging and larger aperture ratio. Nanowire growth often requires high temperatures, but if the nanowires can be grown on a temperature-compatible substrate and then be transferred to the target substrate for FET fabrication, and if the temperature during FET fabrication is below ∼150 °C, nanoscale FETs can be fabricated on polymeric substrates for flexible displays.