Strategy from the Fabrication of Polymer Thin Film Transistor on Rigid and Flexible Substrate to LTspice Simulation Towards Circuit Applications

S. Puttur, S. Dutta
{"title":"Strategy from the Fabrication of Polymer Thin Film Transistor on Rigid and Flexible Substrate to LTspice Simulation Towards Circuit Applications","authors":"S. Puttur, S. Dutta","doi":"10.1109/ICEE56203.2022.10117961","DOIUrl":null,"url":null,"abstract":"Solution-processed polymer-based organic thin-film transistors (OTFT) have been used in various applications over the past decade due to the advantages of low-temperature processing, inexpensive technology abundant dielectric and semi-conductors materials, and their processing compatibility with flexible substrates. In this work comparision of OTFT fabricated on the flexible and rigid substrate is accomplished using cross-linked poly(4-vinyl phenol) (c-PVP) as polymer gate dielectric and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-c14) as polymer semiconductor. The dielectric cross-linking is accomplished at comparatively much lower temperatures to achieve solution processing on the flexible polyethylene terephthalate (PET) substrate. The spice Level-1 model parameters for the OTFTs on glass and flexible substrates are extracted from DC characteristics. Finally the DC characteristics are simulated using LTspice simulator incorporating the extracted parameters. The extracted model parameter of OTFT can be used for circuit design and applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10117961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Solution-processed polymer-based organic thin-film transistors (OTFT) have been used in various applications over the past decade due to the advantages of low-temperature processing, inexpensive technology abundant dielectric and semi-conductors materials, and their processing compatibility with flexible substrates. In this work comparision of OTFT fabricated on the flexible and rigid substrate is accomplished using cross-linked poly(4-vinyl phenol) (c-PVP) as polymer gate dielectric and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-c14) as polymer semiconductor. The dielectric cross-linking is accomplished at comparatively much lower temperatures to achieve solution processing on the flexible polyethylene terephthalate (PET) substrate. The spice Level-1 model parameters for the OTFTs on glass and flexible substrates are extracted from DC characteristics. Finally the DC characteristics are simulated using LTspice simulator incorporating the extracted parameters. The extracted model parameter of OTFT can be used for circuit design and applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
从刚性和柔性基板上聚合物薄膜晶体管的制造到LTspice模拟到电路应用的策略
溶液加工聚合物基有机薄膜晶体管(OTFT)由于其低温加工、廉价技术、丰富的介电材料和半导体材料以及与柔性衬底的加工兼容性等优点,在过去的十年中得到了广泛的应用。在这项工作中,比较了用交联聚(4-乙烯基苯酚)(c-PVP)作为聚合物栅极介质和聚[2,5-双(3-十四烷基噻吩-2-基)噻吩](PBTTT-c14)作为聚合物半导体在柔性和刚性衬底上制备的OTFT。在相对较低的温度下完成介电交联,以实现在柔性聚对苯二甲酸乙二醇酯(PET)衬底上的溶液处理。从直流特性中提取了玻璃和柔性基板上OTFTs的spice Level-1模型参数。最后利用LTspice模拟器结合提取的参数对直流特性进行了仿真。提取的OTFT模型参数可用于电路设计和应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Organic Dye Based Longer Wavelength Photodetector for Narrowband Application Numerical Simulation and Parameter Extraction of Pure Thermionic Emission Across Schottky Contacts Inkjet-printed mesoporous indium oxide-based near-vertical transport thin film transistors and pseudo-CMOS inverters Flash imaging for microfluidics Fabrication and optimization of T -gate for high performance HEMT and MMIC devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1