A 77-101GHz 6-Bit Vector-Modulated Phase Shifter with Low RMS Error in 65nm SOI CMOS

Qing Zhang, Keping Wang
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引用次数: 2

Abstract

This paper presents a 77–101 GHz active 6-bit phase shifter based on a vector-modulated technique in 65 $n$ m SOI CMOS technology for W-band phased-array systems. Optimizations of the impedance-invariant variable gain amplifier (VGA) are performed to reduce the phase error and gain error among the phase states. In addition, a quadrature signal generator composed of a 90-degree hybrid and a pair of Marchand balun is exploited for wideband applications. The proposed phase shifter achieves 5.6° phase step, < 2.0° RMS phase error and < 0.8dB RMS gain error over 77–101 GHz. The total power consumption is 31mW and the core area of the phase shifter is only 0.2mm2.
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基于65nm SOI CMOS的低RMS误差的77-101GHz 6位矢量调制移相器
本文提出了一种基于矢量调制技术的77-101 GHz有源6位移相器,用于w波段相控阵系统。对阻抗不变变增益放大器(VGA)进行了优化,以减小相位误差和相位状态间的增益误差。此外,一种由90度混合器和一对马尔尚平衡器组成的正交信号发生器被开发用于宽带应用。该移相器在77 ~ 101 GHz范围内实现了5.6°相位步进、< 2.0°RMS相位误差和< 0.8dB RMS增益误差。总功耗31mW,移相器的核心面积仅为0.2mm2。
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