Avishek Das, R. Saha, A. Karmakar, S. Chattopadhyay, M. Palit, H. Dutta
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引用次数: 4
Abstract
Vertically oriented, high quality n-type ZnO nanowire/p-Si heterojunction photodiode is fabricated by inexpensive chemical bath deposition technique. Under 5.30 mW/sq.cm, 374 nm UV irradiation in air, photodiode offered a maximum self-biased photocurrent and photosensitivity of -26.55 μA and 23000. Photodiode exhibited very stable, rapid self-biased binary photocurrent switching with a rise and fall time of ~25.27 ms and ~49.82 ms.
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