K. Ohnuki, T. Higuchi, M. Takayasu, M. Sogawa, T. Tsukamoto
{"title":"Low-temperature preparation of ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ thin films by pulsed laser deposition","authors":"K. Ohnuki, T. Higuchi, M. Takayasu, M. Sogawa, T. Tsukamoto","doi":"10.1109/ISAF.2002.1195897","DOIUrl":null,"url":null,"abstract":"Ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ (BNN) thin films were prepared on MgO (100) substrates by pulsed laser deposition method. When the laser power density and repetition frequency were fixed at 200 mJ/cm/sup 2/ and 5 Hz, respectively, the c-axis oriented BNN thin film was obtained at substrate temperature of 650/spl deg/C. The interface between the c-axis oriented BNN thin film and MgO substrate was very smooth. The band gap of the c-axis oriented BNN thin film was about 3.1 eV, which accords to that of the BNN single crystal.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ (BNN) thin films were prepared on MgO (100) substrates by pulsed laser deposition method. When the laser power density and repetition frequency were fixed at 200 mJ/cm/sup 2/ and 5 Hz, respectively, the c-axis oriented BNN thin film was obtained at substrate temperature of 650/spl deg/C. The interface between the c-axis oriented BNN thin film and MgO substrate was very smooth. The band gap of the c-axis oriented BNN thin film was about 3.1 eV, which accords to that of the BNN single crystal.
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