{"title":"A GaAs monolithic voltage controlled oscillator","authors":"B. Scott, M. Wurtele, B. Creggar","doi":"10.1109/ISSCC.1984.1156582","DOIUrl":null,"url":null,"abstract":"A monolithic voltage-controlled oscillator covering the 11.5- 20.0GHz band continuously, with an average power output of + 12.8dBm, will be described. A (1.1 × 1.3)mm2chip contains a 300μm wide FET, RF bypass capacitors, gate and source inductors and two planar high capacitance ratio varactors.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A monolithic voltage-controlled oscillator covering the 11.5- 20.0GHz band continuously, with an average power output of + 12.8dBm, will be described. A (1.1 × 1.3)mm2chip contains a 300μm wide FET, RF bypass capacitors, gate and source inductors and two planar high capacitance ratio varactors.
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