F. Găiseanu, D. Kruger, J. Stoemenos, C. Dimitriadis, C. Postalache, H. Richter, W. Schroter, M. Seibt
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引用次数: 1
Abstract
TEM, spreading resistance and SIMS investigations of LP-CVD polysilicon layers deposited at 620/spl deg/C on a Si substrate, doped by P prediffusion at 900/spl deg/C and subsequently annealed at temperatures in the range 900/spl deg/C-1000/spl deg/C, allow the authors to propose a doping-restructuration mechanism based on the self-interstitial injection during the P diffusion.
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