Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors

Chen-Chen Yang, K. Peng, Yung-Chen Chen, Horng-Chih Lin, Pei-Wen Li
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引用次数: 1

Abstract

In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire channel and short-channel length, we are able to detect clear RTN signals as the gate voltage is sufficiently large. Location of the trap responsible for the RTN is estimated to be 1.13 nm within the gate oxide away from the oxide/channel interface.
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栅极环多晶硅无结纳米线晶体管随机电报噪声研究
本文研究了短通道栅极全能(GAA)多晶硅无结纳米线(NW)晶体管的随机电报噪声(RTN)特性。测试装置采用基于i线的光刻技术,结合新颖的间隔蚀刻技术,可大幅缩小通道尺寸。基于微小的纳米线通道和短通道长度,当栅极电压足够大时,我们可以检测到清晰的RTN信号。据估计,产生RTN的陷阱位于远离氧化物/通道界面的栅极氧化物内1.13 nm处。
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