A Proposed High-k Dielectric Based Thin Film Transistor for Next Generation Backplane Display Technology

A. Singh, A. Dikshit, Brahmdutta Dixit, V.V. Kharche, Kamal, J. Rana, P. Chakrabarti, A. Pandey
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Abstract

A Zinc oxide (ZnO)-based thin film transistor (TFT) has been proposed to be built using a high-k $\mathbf{La}_{\mathbf{x}}\mathbf{Ta}_{1-\mathbf{x}}\mathbf{O}_{\mathbf{y}}$ as an insulator to enhance their effectuation for backplane display technology. The device has been scrutinized on Silvaco ATLAS™ 2D simulator to examine the switching performance of the device for possible application in display driver circuits. To improvise the working of the TFT for the targeted application the atomic compositions of La and Ta in $\mathbf{La}_{\mathbf{x}}\mathbf{Ta}_{1-\mathbf{x}}\mathbf{O}_{\mathbf{y}}$ have been converted to attune the dielectric constant of the insulator. The study reveals that the high-k insulator-based ZnO TFT can be modified to obtain high on/off current ratio of the order of 108 to ensure the high-speed operation with low sub-threshold swing 0.49 V/dec which is desirable for low power applications. It has been demonstrated that high-k dielectric insulator-based ZnO TFT has great potential for the development of cost-effective large-area display systems.
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一种用于下一代背板显示技术的高k介电薄膜晶体管
提出了一种基于氧化锌(ZnO)的薄膜晶体管(TFT),采用高k的$\mathbf{La}_{\mathbf{x}}\mathbf{Ta}_{1-\mathbf{x}}\mathbf{O}_{\mathbf{y}}$作为绝缘体,以提高其在背板显示技术中的效果。该器件已在Silvaco ATLAS™2D模拟器上进行了仔细检查,以检查该器件在显示驱动电路中的可能应用的开关性能。为了改进TFT的工作,将$\mathbf{La}_{\mathbf{x}}\mathbf{Ta}_{1-\mathbf{x}}\mathbf{O}_{\mathbf{y}}$中的La和Ta的原子组成转换为调谐绝缘体的介电常数。研究表明,通过对高k绝缘子基ZnO TFT进行修饰,可以获得108量级的高通/关电流比,以低亚阈值摆幅0.49 V/dec实现低功耗应用所需的高速工作。研究表明,基于高k介电绝缘体的ZnO TFT在开发高性价比的大面积显示系统方面具有很大的潜力。
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