Microwave FET's - What's Next?

C. Liechti
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Abstract

Over the last decade, GaAs FET's have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** "Where are GaAs IC's today, and where do we go from here?" These and related questions are briefly covered in this paper.
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微波场效应管——下一步是什么?
在过去的十年中,砷化镓场效应管在低噪声和高效功率放大方面取得了巨大的进步。重点介绍了这些进展,并指出了未来发展的可能途径。展望未来,重要的是要认识到GaAs技术是微波单片集成电路的关键。**“今天的GaAs集成电路在哪里,我们将从这里走向何方?”本文将简要介绍这些及相关问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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A New Method of Exciting Axial Slots Cut on a Circular Cylinder Improved Design Method for X-Band Microstrip FET Amplifiers without Experimental Adjustment Techniques. Microwave Frequency Digital Circuits Using GaAs Mesfet's with a Planar Self-Aligned Technology Effects Due to Microwaves in an Enzyme-Substrate System Design Limitations and Experimental Results of High Power CW PPM-Focused TWT's from 30 to 50 GHz
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