Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese, Bala Haran
{"title":"Materials Enabled Memory Scaling and New Architectures","authors":"Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese, Bala Haran","doi":"10.1109/IMW56887.2023.10145976","DOIUrl":null,"url":null,"abstract":"Both DRAM and NAND evolution over the last decade have come less and less from cell design changes and more from material changes to address higher aspect ratios with reduced feature size variation. We review key processes that have enabled density shrink for both core memory array and the peri transistor. The current shortcomings in scaling DRAM are highlighted and we outline new architectures powered by novel materials and process that overcome these.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Both DRAM and NAND evolution over the last decade have come less and less from cell design changes and more from material changes to address higher aspect ratios with reduced feature size variation. We review key processes that have enabled density shrink for both core memory array and the peri transistor. The current shortcomings in scaling DRAM are highlighted and we outline new architectures powered by novel materials and process that overcome these.