Materials Enabled Memory Scaling and New Architectures

Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese, Bala Haran
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Abstract

Both DRAM and NAND evolution over the last decade have come less and less from cell design changes and more from material changes to address higher aspect ratios with reduced feature size variation. We review key processes that have enabled density shrink for both core memory array and the peri transistor. The current shortcomings in scaling DRAM are highlighted and we outline new architectures powered by novel materials and process that overcome these.
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材料支持内存缩放和新架构
在过去的十年中,DRAM和NAND的发展越来越少地来自于电池设计的变化,而更多地来自于材料的变化,以解决更高的长宽比和更小的特征尺寸变化。我们回顾了使核心存储器阵列和外围晶体管的密度缩小的关键工艺。强调了当前扩展DRAM的缺点,并概述了由新材料和工艺驱动的新架构,以克服这些缺点。
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