Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou
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引用次数: 1
Abstract
This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.
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