HEMT-based MMIC single-balanced mixers for 60-GHz indoor communication systems

Abstract

The authors developed V-band monolithic active-gate and active-drain mixers with a single-balance configuration. The HEMTs in both active mixers have an AlGaAs/GaAs structure and gates 0.15 /spl mu/m long and 100 /spl mu/m wide. The single-balanced active-gate mixer has a maximum conversion gain of -4.3 dB and only 2.5 dBm LO drive at 60-GHz. The gate mixer has a noise figure of 5.3 dB at 58 GHz and 0 dBm LO drive power. The single-balanced active-drain mixer has a maximum conversion gain of -6 dB and 13.5 dBm LO drive at 60 GHz. The drain mixer has a noise figure of 6.8 dB at 58 GHz and 8.5 dBm LO drive. The RF performances of active-gate and active-drain mixers fabricated on the same wafer are compared.<>