{"title":"Asymmetric InGaAs MOSFETs with InGaAs source and InP drain","authors":"Jiongjiong Mo, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2014.6880553","DOIUrl":null,"url":null,"abstract":"Asymmetric In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs with different regrown contacts at source (In<sub>0.53</sub>Ga<sub>0.47</sub>As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g<sub>m</sub>/g<sub>d</sub> has been obtained with reduced output conductance g<sub>d</sub> and improved break-down voltage V<sub>bd</sub>. For L<sub>g</sub>=100nm, a high oscillation frequency f<sub>max</sub>=270GHz has been obtained using an InP drain.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain gm/gd has been obtained with reduced output conductance gd and improved break-down voltage Vbd. For Lg=100nm, a high oscillation frequency fmax=270GHz has been obtained using an InP drain.
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