Ranajoy Bhattacharyar, Pao-Chuan Shih, Tomás Palacios, J. Browning
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引用次数: 0
Abstract
Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.
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