An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology

T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich
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引用次数: 1

Abstract

This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
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InP DHBT技术中的超宽带低噪声分布式放大器
本文报道了一种基于转移衬底InP DHBT技术的超宽带低噪声放大器。宽带特性是通过使用层叠单元的分布式拓扑来获得的。每个单元电池由两个级联晶体管组成,发射极长度为500 nm, fT/Fmax分别为~ 350/400 GHz。由于最佳的线阻抗匹配,低共基晶体管的电容和低集电极电流工作,该电路也显示出低噪声数字。所测电路的带宽为40 ~ 185 GHz,在75 ~ 105 GHz频率范围内噪声系数为8 dB。此外,该电路在所有已报道的具有级联码配置的单级放大器中具有最宽的3db带宽操作。
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