A short channel MOSFET model

Abstract

The MOSFET equivalent circuit model described incorporates short channel and temperature effects. It includes expressions for the device current in the subthreshold, triode and saturation regions and uses a field dependent mobility and a drain voltage dependent threshold voltage. The drain current-voltage characteristic and its first derivative are continuous in all regions. Relationships for the gate-source and gate-drain capacitances are derived as a function of the device potentials using a field dependent mobility. Using the closed form expressions of this model, simulations were performed for micron long devices having uniform and ion-implanted channel profiles and compared with data at room, above room and liquid nitrogen temperature.