J. Tantillo, P. Cook, K. Evans, M.J. Martinez, R. Bobb, E. Martinez, C. E. Stutz, F. Schuermeyer
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引用次数: 1
Abstract
The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage.<>
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