{"title":"System-level optimization and benchmarking for InAs nanowire based gate-all-around tunneling FETs","authors":"C. Pan, A. Ceyhan, A. Naeemi","doi":"10.1109/ISQED.2013.6523610","DOIUrl":null,"url":null,"abstract":"The ON/OFF current and input capacitance of InAs nanowire based gate-all-around (GAA) tunnel FETs are modeled. Based on the device- and system-level models, optimization has been done and comparison has been made between TFETs and CMOS devices under different constraints for both single- and multi-core processors. Several performance metrics have been analyzed, which shows that optimal numbers of cores, power density and die size area exist for maximizing various design targets.","PeriodicalId":127115,"journal":{"name":"International Symposium on Quality Electronic Design (ISQED)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2013.6523610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The ON/OFF current and input capacitance of InAs nanowire based gate-all-around (GAA) tunnel FETs are modeled. Based on the device- and system-level models, optimization has been done and comparison has been made between TFETs and CMOS devices under different constraints for both single- and multi-core processors. Several performance metrics have been analyzed, which shows that optimal numbers of cores, power density and die size area exist for maximizing various design targets.
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