{"title":"A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs","authors":"Hong-Wun Gao, T. Chiang","doi":"10.1109/ASICON.2013.6811953","DOIUrl":null,"url":null,"abstract":"A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs including rectangular-shaped ΩG (RΩG) and cylindrical-shaped ΩG (CΩG) FETs is presented. The natural length for ΩG MOSFET is obtained by the equation of equivalent number of gates (ENG), where the ΩG device can be virtually broken into equivalent double-gate (DG) and single-gate (SG) transistors working in parallel based on perimeter-weighted-sum method. Numerical device simulation data for DIBL were compared to the model to validate the formula. Among RΩG devices, one with a square cross section and/or large oxide underlap coverage factor (OUCF) will show the worst immunity to DIBL due to the largest natural length. For equivalent short-channel control, the RΩG MOSFET with OUCF=0.3 illustrates an improvement of up to 25% in the minimum channel length when compared to the DG MOSFET.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6811953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs including rectangular-shaped ΩG (RΩG) and cylindrical-shaped ΩG (CΩG) FETs is presented. The natural length for ΩG MOSFET is obtained by the equation of equivalent number of gates (ENG), where the ΩG device can be virtually broken into equivalent double-gate (DG) and single-gate (SG) transistors working in parallel based on perimeter-weighted-sum method. Numerical device simulation data for DIBL were compared to the model to validate the formula. Among RΩG devices, one with a square cross section and/or large oxide underlap coverage factor (OUCF) will show the worst immunity to DIBL due to the largest natural length. For equivalent short-channel control, the RΩG MOSFET with OUCF=0.3 illustrates an improvement of up to 25% in the minimum channel length when compared to the DG MOSFET.
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