{"title":"Feasibility of employing an I/sub DDQ/ output amplifier in deep submicron built-in current sensors","authors":"S. Athan, D. Landis","doi":"10.1109/IDDQ.1996.557822","DOIUrl":null,"url":null,"abstract":"The feasibility of employing an I/sub DDQ/ output MOSFET amplifier in deep submicron CMOS ICs is evaluated. CUT performance is evaluated to determine the impact due to process scaling in the deep submicron regime. Comparisons of area overhead are made between BICS designs with and without the use of an output amplifier.","PeriodicalId":285207,"journal":{"name":"Digest of Papers 1996 IEEE International Workshop on IDDQ Testing","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers 1996 IEEE International Workshop on IDDQ Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDDQ.1996.557822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The feasibility of employing an I/sub DDQ/ output MOSFET amplifier in deep submicron CMOS ICs is evaluated. CUT performance is evaluated to determine the impact due to process scaling in the deep submicron regime. Comparisons of area overhead are made between BICS designs with and without the use of an output amplifier.
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