R. Pagano, D. Corso, S. Lombardo, S. Libertino, G. Valvo, D. Sanfilippo, A. Russo, P. Fallica, A. Pappalardo, P. Finocchiaro
{"title":"Optimized silicon photomultipliers with optical trenches","authors":"R. Pagano, D. Corso, S. Lombardo, S. Libertino, G. Valvo, D. Sanfilippo, A. Russo, P. Fallica, A. Pappalardo, P. Finocchiaro","doi":"10.1109/ESSDERC.2011.6044204","DOIUrl":null,"url":null,"abstract":"This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"13 19","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.
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