A master equation approach to the simulation of electron transport in small semiconductor devices

Massimo V. Fischetti
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Abstract

The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.
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小型半导体器件中电子输运模拟的主方程方法
本文的目的是概述输运方程的“形式化”推导,强调所需的关键近似,并将该方法扩展到更实际的能带结构。给出了一个电子在镍二极管中的传递的例子。
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