M. Funabashi, K. Hosoya, K. Ohata, K. Onda, N. Iwata, M. Kuzuhara
{"title":"High gain V-band heterojunction FET MMIC power amplifiers","authors":"M. Funabashi, K. Hosoya, K. Ohata, K. Onda, N. Iwata, M. Kuzuhara","doi":"10.1109/GAAS.1993.394429","DOIUrl":null,"url":null,"abstract":"High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0.15 /spl mu/m T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high f/sub max/ of 227 GHz with high gate breakdown voltage of -13 V. A single-stage 65 GHz-band amplifier has exhibited 8.7 dB small signal gain with the 1 dB-gain-down bandwidth of 2 GHz. A single-stage 60 GHz-band amplifier has achieved 8.4 dB gain with 3 GHz bandwidth and good input and output impedance matching. The output power of 37.2 mW with high power-added-efficiency of 25.6% at 61.2 GHz has been obtained at 3 V drain bias.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0.15 /spl mu/m T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high f/sub max/ of 227 GHz with high gate breakdown voltage of -13 V. A single-stage 65 GHz-band amplifier has exhibited 8.7 dB small signal gain with the 1 dB-gain-down bandwidth of 2 GHz. A single-stage 60 GHz-band amplifier has achieved 8.4 dB gain with 3 GHz bandwidth and good input and output impedance matching. The output power of 37.2 mW with high power-added-efficiency of 25.6% at 61.2 GHz has been obtained at 3 V drain bias.<>
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