C. Diouf, A. Cros, S. Monfray, J. Mitard, J. Rosa, F. Boeuf, G. Ghibaudo
{"title":"Transport characterisation of Ge pMOSFETS in saturation regime","authors":"C. Diouf, A. Cros, S. Monfray, J. Mitard, J. Rosa, F. Boeuf, G. Ghibaudo","doi":"10.1109/ESSDERC.2011.6044194","DOIUrl":null,"url":null,"abstract":"The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.
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