Characterization of a single-supply subthreshold FPGA

P. Grossmann, M. Leeser, M. Onabajo
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Abstract

This paper presents a pair of field programmable gate array (FPGA) test chips optimized for subthreshold operation to maximize energy efficiency. Both chips were fabricated in the IBM 0.18 μm silicon-on-insulator (SOI) process using the same FPGA architecture; one making use of conventional static CMOS multiplexers and one using dynamic threshold MOS (DTMOS) multiplexers. Reliable subthreshold operation is achieved for both test chips by replacing conventional SRAM with variation-tolerant interruptible latches. For the chip with conventional multiplexers, testing across eleven dice showed an average minimum operating voltage of 300 mV. A 43X reduction in power delay product (PDP) was seen compared to 1.5V operation. For the DTMOS chip, testing across four dice showed an average minimum operating voltage of 260 mV. The test results show that the DTMOS chip is more reliable at sub-300 mV, consistent with simulations. Minimum energy analysis of both test chips suggests that the minimum energy point for the FPGA occurs at subthreshold voltages.
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单电源亚阈值FPGA的特性
本文提出了一对针对亚阈值操作优化的现场可编程门阵列(FPGA)测试芯片,以最大限度地提高能效。这两款芯片均采用IBM 0.18 μm绝缘体上硅(SOI)工艺制造,采用相同的FPGA架构;一种使用传统的静态CMOS多路复用器,另一种使用动态阈值MOS (DTMOS)多路复用器。可靠的亚阈值操作实现了两个测试芯片取代传统的SRAM与可变可中断锁存器。对于具有传统多路复用器的芯片,在11个骰子上的测试显示平均最小工作电压为300 mV。与1.5V操作相比,功率延迟积(PDP)降低了43X。对于DTMOS芯片,在四个芯片上的测试显示平均最小工作电压为260 mV。测试结果表明,该DTMOS芯片在低于300 mV的电压下更可靠,与仿真结果一致。两个测试芯片的最小能量分析表明,FPGA的最小能量点发生在亚阈值电压。
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