Performance comparison and variability analysis of CNT bundle and Cu interconnects

N. Alam, A. K. Kureshi, M. Hasan, T. Arslan
{"title":"Performance comparison and variability analysis of CNT bundle and Cu interconnects","authors":"N. Alam, A. K. Kureshi, M. Hasan, T. Arslan","doi":"10.1109/MSPCT.2009.5164202","DOIUrl":null,"url":null,"abstract":"Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance and capacitance of CNT bundle and compare it with the Cu interconnects at the 32nm technology node (year 2013). HSPICE simulation results show that CNT bundle consumes 1.5 to 2 folds smaller power and are 1.4 to 3 times faster than Cu for Intermediate and Global interconnects. However, for local interconnect Cu wire outperforms the CNT bundle. It was observed that process variation has comparable effects for CNT bundle and Cu wire except for Local interconnects.","PeriodicalId":179541,"journal":{"name":"2009 International Multimedia, Signal Processing and Communication Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Multimedia, Signal Processing and Communication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSPCT.2009.5164202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance and capacitance of CNT bundle and compare it with the Cu interconnects at the 32nm technology node (year 2013). HSPICE simulation results show that CNT bundle consumes 1.5 to 2 folds smaller power and are 1.4 to 3 times faster than Cu for Intermediate and Global interconnects. However, for local interconnect Cu wire outperforms the CNT bundle. It was observed that process variation has comparable effects for CNT bundle and Cu wire except for Local interconnects.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
碳纳米管束与铜互连的性能比较及可变性分析
碳纳米管束(CNT)具有取代片上铜(Cu)互连的潜力,因为它们具有较大的导电性和载流能力。相对于标准铜互连,分析工艺变化对碳纳米管束的影响对于预测基于碳纳米管互连的可靠性非常重要。本文研究了工艺变化对碳纳米管束电阻和电容的影响,并将其与32nm技术节点(2013年)的铜互连进行了比较。HSPICE仿真结果表明,在中间和全局互连中,碳纳米管束的功耗比Cu低1.5 ~ 2倍,速度比Cu快1.4 ~ 3倍。然而,对于本地互连,铜线优于碳纳米管束。除了局部互连外,工艺变化对碳纳米管束和铜丝的影响相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An overview of advanced FPGA architectures for optimized hardware realization of computation intensive algorithms Error resilient technique for SPIHT coded color images Analysis of carbon nanotube interconnects and their comparison with Cu interconnects High input impedance SIMO versatile biquad filter Seismic signal enhancement through statistical (Wiener) approach
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1