{"title":"Performance comparison and variability analysis of CNT bundle and Cu interconnects","authors":"N. Alam, A. K. Kureshi, M. Hasan, T. Arslan","doi":"10.1109/MSPCT.2009.5164202","DOIUrl":null,"url":null,"abstract":"Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance and capacitance of CNT bundle and compare it with the Cu interconnects at the 32nm technology node (year 2013). HSPICE simulation results show that CNT bundle consumes 1.5 to 2 folds smaller power and are 1.4 to 3 times faster than Cu for Intermediate and Global interconnects. However, for local interconnect Cu wire outperforms the CNT bundle. It was observed that process variation has comparable effects for CNT bundle and Cu wire except for Local interconnects.","PeriodicalId":179541,"journal":{"name":"2009 International Multimedia, Signal Processing and Communication Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Multimedia, Signal Processing and Communication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSPCT.2009.5164202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance and capacitance of CNT bundle and compare it with the Cu interconnects at the 32nm technology node (year 2013). HSPICE simulation results show that CNT bundle consumes 1.5 to 2 folds smaller power and are 1.4 to 3 times faster than Cu for Intermediate and Global interconnects. However, for local interconnect Cu wire outperforms the CNT bundle. It was observed that process variation has comparable effects for CNT bundle and Cu wire except for Local interconnects.