Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication

F. Taleb, C. Levallois, C. Paranthoen, N. Chevalier, O. de Sagazan, A. Létoublon, O. Durand
{"title":"Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication","authors":"F. Taleb, C. Levallois, C. Paranthoen, N. Chevalier, O. de Sagazan, A. Létoublon, O. Durand","doi":"10.1109/ICIPRM.2014.6880543","DOIUrl":null,"url":null,"abstract":"We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.
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利用电镀铜通过硅孔连接衬底,用于VCSEL制造
我们提出了一种新的方法来结合任何衬底在硅主机平台上,在实现基于InP的垂直腔面发射激光器(VCSEL)的特殊情况下。这个过程是基于机械粘合,使用电镀铜通过硅孔。它能够以低诱导应力实现低成本的键合,并显著改善器件的热性能。给出了发光二极管实现的初步结果。
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