Jinyu Cai, Shengwen Yu, Jinrong Cheng, Ya Lu, Z. Meng
{"title":"Synthesis and Dielectric properties of BiFeO3-PbTiO3 films prepared by sol-gel method","authors":"Jinyu Cai, Shengwen Yu, Jinrong Cheng, Ya Lu, Z. Meng","doi":"10.1109/ISAF.2007.4393293","DOIUrl":null,"url":null,"abstract":"BiFeO3 -PbTiO3 (BFO-PT) films were synthesized by sol-gel method with the annealing temperatures to be 550degC, 600degC, and 650degC, respectively. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The dielectric constant and loss factor are measured. The leakage current density is also performed to check the conductivity of the films. The effect of annealing temperature of the BFO-PT films on the dielectric properties is obvious with the film annealed at 600degC presenting better dielectric behavior.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
BiFeO3 -PbTiO3 (BFO-PT) films were synthesized by sol-gel method with the annealing temperatures to be 550degC, 600degC, and 650degC, respectively. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The dielectric constant and loss factor are measured. The leakage current density is also performed to check the conductivity of the films. The effect of annealing temperature of the BFO-PT films on the dielectric properties is obvious with the film annealed at 600degC presenting better dielectric behavior.