{"title":"Analytical Model for the Surface Electrical field Distributions of Double RESURF Devices with Gaussian-doped P-top Region","authors":"Qi Li, Zhaoji Li, Bo Zhang","doi":"10.1109/ICCCAS.2007.4348281","DOIUrl":null,"url":null,"abstract":"In this paper, an analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias; the dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to gain the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here.","PeriodicalId":218351,"journal":{"name":"2007 International Conference on Communications, Circuits and Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Communications, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCAS.2007.4348281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, an analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias; the dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to gain the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here.
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