Modified Scalable Model Considering Kink Effect for High-Power GaN HEMTs

Abstract

This paper proposes a modified scalable model considering kink effect for high-power Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs). Fixtures that can withstand high voltage and high current are designed to complete current-voltage (I-V) measurements of different sizes of high-power GaN HEMTs. Based on the measured I-V data, a scalable output current model including the kink effect is proposed. The scaling rule of the kink effect in GaN HEMTs with different sizes is studied and analyzed. The accuracy of the proposed scalable model is verified by applying the model to different sizes of GaN HEMTs.