A Novel Driver less SRAM with Indirect Read for Low Energy Consumption and Read Noise Elimination

D. Nayak, U. Nanda, P. Rout, S. Biswal, Dhananjaya Tripthy, S. Swain, Biswajit Baral, S. K. Das
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引用次数: 2

Abstract

The modern electronics gadget has influenced tremendously every aspects of life. The demand to add more and more functionality has forced to increase the performance of the processor. To ensure a robust data supply to the processor a high performance, stable and low power SRAM is also of utmost necessity. An indirect read SRAM cell is proposed here which eliminates the read noise insertion to increase the data stability. It also consumes 41% less energy compared to the conventional SRAM cell. The SRAM cell is designed to be written single ended using only one write access transistor. The cell reduces the energy consumption by reducing the short circuit current and also reducing the number of leakage path. The cell also has a high write speed since the storage data node is a floating node and not connected to the ground.
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一种新型的无驱动器SRAM,具有低能耗和消除读噪声的间接读
现代电子产品极大地影响了生活的方方面面。增加越来越多功能的需求迫使处理器的性能不断提高。为了确保向处理器提供强大的数据供应,高性能,稳定和低功耗的SRAM也是非常必要的。本文提出了一种间接读式SRAM单元,消除了读噪声的插入,提高了数据的稳定性。与传统的SRAM电池相比,它还消耗41%的能量。SRAM单元被设计为仅使用一个写入存取晶体管进行单端写入。该电池通过减少短路电流和减少泄漏路径的数量来降低能量消耗。由于存储数据节点是浮动节点,没有连接到地面,因此该单元还具有很高的写速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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