M. M. A. Chawa, Carol de Benito, H. Castán, S. Dueñas, S. Stavrinides, R. Tetzlaff, R. Picos
{"title":"Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux","authors":"M. M. A. Chawa, Carol de Benito, H. Castán, S. Dueñas, S. Stavrinides, R. Tetzlaff, R. Picos","doi":"10.1109/mocast54814.2022.9837658","DOIUrl":null,"url":null,"abstract":"In this work, an empirical model based on a pure relation between charge and flux (aka an ideal memristor) has been proposed to fit the experimental data for ReRAM devices in flux charge domain. The model is able to capture the behavior with a very good accuracy, including also the behavior of the memconductance.","PeriodicalId":122414,"journal":{"name":"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)","volume":"181 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mocast54814.2022.9837658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, an empirical model based on a pure relation between charge and flux (aka an ideal memristor) has been proposed to fit the experimental data for ReRAM devices in flux charge domain. The model is able to capture the behavior with a very good accuracy, including also the behavior of the memconductance.
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